融液および溶液からの結晶成長解析
| 題名 | 発表者 | 発表先 | 結晶名 |
|---|---|---|---|
| Influence of Coriolis force on thermal convection and impurity segregation during crystal growth under microgravity |
E.N. Kolesnikova, et al |
Journal of Crystal Growth, 180/3-4 (1997) pp. 578-586 |
- |
| Modelling analysis of oxygen transport during Czochralski growth of silicon crystals |
Y.E. Egrov, et al |
Mat. Res. Soc. Symp. Proc., vol.490, MRS, Pennsylvania, 1998, p.181 |
Silicon |
| Numerical modeling of Czochralski silicon crystal growth |
V.V. Kalaev, et al |
ECCOMAS-2000, September 11-14, 2000, Barcelona, Spain, CD-ROM Proceeding, N677 (9 pages) |
Silicon |
| Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface |
I.Y. Evstratov, et al |
Microelectronic Engineering, 56/1-2 (2001) pp. 139-142 |
Silicon |
| Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals |
I.Y. Evstratov, et al |
Journal of Crystal Growth, 230 (2001) pp. 22-29 |
Silicon |
| Modeling of turbulent melt convection during Czochralski bulk crystal growth |
V.V. Kalaev, et al |
"TSFP-2, Stockholm, Sweden, June 27-29, 2001, Proceedings, Vol. 3, pp. 381-386 /Journal of Turbulence, vol. 3 (2002) 013, http://jot.iop.org/ (12 pages)" |
Silicon |
| Modeling of impurity transport and point defect formation during Cz Si crystal growth |
V.V. Kalaev, et al |
Solid State Phenomena 82-84 (2002) pp. 41-46 |
Silicon |
| Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth |
I.Y. Evstratov, et al |
Journal of Crystal Growth, 237–239 (2002) 1757–1761 |
Silicon |
| Large Eddy Simulation of Melt Convection during Czochralski Crystal Growth |
V.V. Kalaev, et al |
Advances in Turbulence IX, Proceedings of the Ninth European Turbulence Conference, Southampton, U.K., July 2-5, 2002, pp. 207-210 |
Silicon |
| Hybrid LES/RANS simulation of melt convection during crystal growth |
V.V. Kalaev, et al |
"Engineering Turbulence Modelling and Experiments 5, Edited by W. Rodi and N. Fueyo, Elsevier /The 5th International Symposium on Engineering Turbulence Modelling and Measurements, Mallorca, Spain, 16-18 September, 2002, Proceedings, pp. 337-346" |
Silicon |
| Numerical solution of axisymmetric radiative transfer problems in arbitrary domains using the characteristic method |
S.A. Rukolaine, et al |
J. Quantitative Spectroscopy and Radiative Transfer, 73/2-5 (2002), pp. 205-217 |
- |
| Global analysis of heat transfer in growing BGO crystals (Bi4Ge3O12) by low-gradient Czochralski method |
I.Y. Evstratov, et al |
Journal of Crystal Growth 235 (2002) 371–376 |
Oxide |
| Gas flow effect on global heat transport and melt convection in Czochralski silicon growth |
V.V. Kalaev, et al |
Journal of Crystal Growth, 249/1-2 (2003) pp. 87-99 |
Silicon |
| Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations |
V.V. Kalaev, et al |
Journal of Crystal Growth, 250/1-2 (2003) pp. 203-208 |
Silicon |
| Analysis of magnetic field effect on 3D melt flow in CZ Si growth |
N.G. Ivanov, et al |
Journal of Crystal Growth, 250/1-2 (2003) pp. 183-188 |
Silicon |
| Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals |
E.N.Bystrova, et al |
Journal of Crystal Growth, 250/1-2 (2003) pp. 189-194 |
Ⅲ-Ⅴ |
| Modeling analysis of vCZ growth of GaAs bulk crystals using 3D unsteady melt flow simulations |
E.V.Yakovlev, et al |
Journal of Crystal Growth, 250/1-2 (2003) pp. 195-202 |
Ⅲ-Ⅴ |
| Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals |
E.V. Yakovlev, et al |
Journal of Crystal Growth, 252/1-3 (2003) pp. 26-36 |
Ⅲ-Ⅴ |
| Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection |
V.V. Kalaev, et al |
Materials Science in Semiconductor Processing, 5/4-5 (2003) pp. 369-373 |
Silicon |
| Modeling Analysis of Liquid Encapsulated Czochralski Growth of GaAs and InP Crystals |
E.V.Yakovlev, et al |
Crystal Research and Technology, 38, No. 6 (2003) pp. 506-514 |
Ⅲ-Ⅴ |
| 3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals |
O.V. Smirnova, et al |
International Journal of Heat and Mass Transfer 47 (2004) pp. 363-371 |
Ⅲ-Ⅴ |
| Modeling of point defect formation in silicon monocrystals |
V. A. Zabelin, et al |
Microelectronic Engineering 69 (2003) pp. 641-645 |
Silicon |
| Simulation of facet formation on the crystallization front in oxide crystals growth by Czochralski technique |
O.N. Budenkova |
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.613-618 |
Oxide |
| Numerical Analysis of Heat Transfer and Flows in Liquid Encapsulated CZ Growth of GaAs Crystals |
O.V. Smirnova, et al |
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.677-681 |
Ⅲ-Ⅴ |
| 3D unsteady numerical simulation of heat and mass transfer during CZ Si crystal growth |
K.V. Khodosevitch, et al |
Fifth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2003, Proceedings, pp.696-702 |
Silicon |
| Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface |
V.S. Yuferev, et al |
Journal of Crystal Growth, 253 (2003) 383–397 |
Oxide |
| Parallel Simulation of Czochralski crystal growth |
D.P.Lukanin, et al |
Lecture Notes in Computer Science, Vol. 3019 (2004) pp. 469 - 474 |
Silicon |
| Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth |
D.P.Lukanin, et al |
Journal of Crystal Growth, 266/1-3 (2004) pp. 20 - 27 |
Silicon |
| 3D Computations of Melt Convection and Crystallization Front Geometry during VCz GaAs Growth |
O.V. Smirnova, et al |
Journal of Crystal Growth, 266 (2004) pp 67–73 |
Ⅲ-Ⅴ |
| Simulation of Heat Transfer and Melt Flow in Czochralski Growth of Si1-xGex Crystals |
O.V. Smirnova, et al |
Journal of Crystal Growth, 266 (2004) pp. 74–80 |
Cz_SiGe |
| Effect of internal radiation on the crystal-melt interface shape in Czochralski oxide growth |
O.N.Budenkova |
Journal of Crystal Growth, 266 (2004) pp. 96–102 |
Oxide |
| Simulation of global heat transfer in the Czochralski process for BGO sillenite crystals |
O.N. Budenkova |
Journal of Crystal Growth, 266 (2004) pp. 103–108 |
Oxide |
| Modeling of Czochralski growth of Si crystals in industrial systems with and without magnetic field |
V.V. Kalaev, et al |
The 4th International Symposium on Advanced Science and Technology of Silicon Materials, November 22-26, 2004, Kona, Hawaii, The Japan Society for the Promotion of Science, Proceedings, pp. 32-37 |
Silicon |
| 2D simulation of carbon transport at the growth of GaAs crystals by liquid encapsulated Czochralski techniques |
E.N. Bystrova, et al |
Journal of Crystal Growth, 275 (2005), pp. 507-514 |
Ⅲ-Ⅴ |
| Peculiarities of the temperature fields in semitransparent oxide crystals being grown by Cz technique |
O.N. Budenkova, et al |
Journal of Crystal Growth, 275 (2005) e727–e732 |
Cz_Ky_semi |
| Effect of heat shield on the shape of the solid–liquid interface and temperature field in the BGO-eulithine LTG Cz growth |
M.G. Vasiliev, et al |
Journal of Crystal Growth 275 (2005) e745–e750 |
Oxide |
| Modelling of Si Transport in Melt during Cz Ge1-xSix Growth |
O. Smirnova, et al |
Sixth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2005, Proceedings, pp.716-722 (in Russian) |
SiGe |
| Effect of the crystal electrical conductivity on melt convection in CZSi crystal growth in external magnetic field |
- |
Sixth International Conference "Single Crystal Growth and Heat&Mass Transfer", Obninsk-2005, Proceedings, pp.725-731(in Russian) |
Silicon |
| Effect of the shouldering angle on the shape of the solid–liquid interface and temperature fields in sillenite-type crystals growth |
V. Bermudez, et al |
Journal of Crystal Growth 279 (2005) 82–87 |
Oxide |
| Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1-xGex crystals |
O.V. Smirnova, et al |
Journal of Crystal Growth, 287-2 (2006) 281-286 |
SiGe |
| 3D unsteady analysis of gas turbulent convection during HPLEC InP growth |
E.N. Bystrova, et al |
Journal of Crystal Growth, 287-2 (2006) 275-280 |
Ⅲ-Ⅴ |
| 3D numerical simulation of heat transfer during horizontal direct crystallization of corundum single crystals |
M.A. Lukanina, et al |
Journal of Crystal Growth, 287-2 (2006) 330-334 |
Cz_Ky_semi |
| Thermal conditions for large alkali-halide crystal growth by the continuous feed method |
V.V. Vasilyev, et al |
Optical Materials 30 (2007) 109–112 |
Cz_Ky_semi |
| Numerical analysis of sapphire crystal growth by the Kyropoulos technique |
S.E. Demina, et al |
Optical Materials 30 (2007) 62–65 |
Cz_Ky_semi |
| Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1_xSix bulk crystals |
O.V. Smirnova, et al |
Journal of Crystal Growth, 303 (2007) 141–145 |
Cz_SiGe |
| Combined effect of DC magnetic .fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth |
V.V. Kalaev |
Journal of Crystal Growth, 303 (2007) 203-210 |
Silicon |
| Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells |
A.T. Kuliev, et al |
Journal of Crystal Growth, 303 (2007) 236-240 |
Silicon |
| Effect of internal radiation on the solid–liquid interface shape in low and high thermal gradient Czochralski oxide growth |
O.N. Budenkova, et al |
Journal of Crystal Growth, 303 (2007) 156–160 |
Oxide |
| Development of a model for on-line control of crystal growth by the AHP method |
M.A. Gonik, et al |
Journal of Crystal Growth, 303, Issue 1 (2007) 180-186 |
Ge,CsI |
| Optimization of Furnace Design and Growth Parameters for Si Cz Growth, Using Numerical Simulation |
O.V. Smirnova, et al |
Journal of Crystal Growth, 310 (2008) 2185–2191 |
Silicon |
| 3D unsteady analysis of melt flow and segregation during EFG Si crystal growth |
O.V. Smirnova, et al |
Journal of Crystal Growth, 310 (2008) 2209–2214 |
EFG_Si |
| Development of oxygen transport model in Czochralski growth of silicon crystals |
A.D. Smirnov, et al |
Journal of Crystal Growth, 310 (2008) 2970– 2976 |
Silicon |
| Modelling of Czochralski Growth of Large Silicon Crystals |
V.V. Kalaev, et al |
Chapter 6 in Crystal Growth Technology, edited by H. J. Scheel and P. Capper, WILEY-VCH, 2008 |
Silicon |
| Modelling of Semitransparent Bulk Crystal Growth |
V.V. Kalaev, et al |
Chapter 8 in Crystal Growth Technology, edited by H. J. Scheel and P. Capper, WILEY-VCH, 2008 |
Oxide |
| Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method |
S.E. Demina, et al |
Journal of Crystal Growth, 310 (2008) 1443–1447 |
Oxide |
| Investigation of the Variations in the Crystallization Front Shape during Growth of Gadolinium Gallium and Terbium Gallium Crystals by the Czochralski Method |
O.N. Budenkova, et al |
Crystallography Reports, 2008, Vol. 53, No. 7, 1181–1190 |
Oxide |
| Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth |
A.D. Smirnov, et al |
Journal of Crystal Growth, 311 (2009) 829-832 |
Silicon |
| Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system |
S.E. Demina, et al |
Journal of Crystal Growth, 311 (2009) 680-683 |
Diamond |
| Heat transfer and convection in Czochralski growth of large BGO Crystals |
K. Mazaev, et al |
Journal of Crystal Growth, 311 (2009) 3933-3937 |
Oxide |
| CRYSTALLINE FRONT CONTROL OF GROWING MULTICRYSTALLINE SI INGOTS DURING THE DIRECTIONAL SOLIDIFICATION PROCESS |
Y. Y. Teng, et al |
PVSEC18 Jan 19-23, (2009) |
Silicon |
| Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace |
Wenjia Su, et al |
Journal of Crystal Growth, 312 (2010) 495-501 |
Silicon |
| Mathematical Simulation of Electromagnetic Stirring of Liquid Steel in a DC Arc Furnace |
S.A. Smirnov, et al |
High Temperature, 2010, Vol. 48, No. 1, 68–76. |
- |
| 3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth |
S.E. Demina, et al |
Journal of Crystal Growth, 320 (2011) 23-27 |
Oxide |
| Liquid flow in a cubic cavity generated by gas motion along the free surface |
V.V. Kalaev, et al |
International Journal of Heat and Mass Transfer 55 (2012) 5214-5221 |
- |
| Optimization of heating conditions during Cz BGO crystal growth | A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ 100_mm_CZ_Si/ |
Silicon |
| HPLEC法(高圧封止材チョクラルスキー法)によるInP結晶成長解析 |
A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ HPLEC_of_InP/ |
Ⅲ-Ⅴ |
| 連続原料供給法によるCSI結晶成長解析 |
A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ Continuous_feed_CsI/ |
Ge,CsI |
| 水熱合成法による石英結晶成長解析 |
A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ quartz/ |
|
| 半透明酸化物結晶の結晶成長解析 |
A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ Oxide_Crystals/ |
Oxide |
| VGF法によるGaAs結晶成長におけるヒーターパワーの調節 |
A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ VGF_growth_of_GaAs/ |
Ⅲ-Ⅴ |
| HEM法(熱交換法)によるサファイア(Al2O3)結晶成長解析 | A.N. Vorob’ev, et al |
http://www.semitech.us/products/CGSim/ HEM/ |
Oxide |
| ４５０ミリシリコン結晶成長 へのシミュレーションの適用 |
塚田 佳紀 （ STR Japan 株式会社） |
日本機械学会 第26回計算力学講演会(CMD2013) (2013) |
Silicon |
| Optimization of bottom heater parameters at growth of large BGO crystals by conventional Czochralski method |
Evgeniy Galenin, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) |
BGO |
| Evolution of Sapphire Melt Convection at the Transition to Large Scale Ky Technology |
Svetlana Demina, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) |
Sapphire |
| Numerical study of dislocation formation during transient growth of multi-Si by the direct solidification technique |
Vasif Mamedov, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) | Silicon |
| Computational analysis of precipitates, parasitic deposits and gas-to-particle conversion during Cz and DS Si-crystal growth |
Andrei Vorob'ev, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) |
Silicon |
| Modeling of Dislocation Dynamics and Facet Formation in VGF of GaAs |
Vasif Mamedov, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) |
GaAs |
| Material development for directional solidification of multicrystalline silicon by AHP method |
Michael A. Gonik, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) | Silicon |
| Simulation of facet formation during Czochralski growth of YAG and GGG |
Vasif Mamedov, et al |
17th International Conference on Crystal Growth and Epitaxy (2013) |
YAG, GGG |
| COMPUTER MODELING OF CZ AND DS SILICON INGOT CRYSTALLIZATION PROCESSES |
Yoshiki Tsukada ( STR Japan ) |
7th International Workshop on Crystalline Silicon Solar Cell (CSSC7) (2014) |
Silicon |
| 結晶成長プロセスにおける数値シミュレーションの役割-バルク結晶成長から薄膜結晶成長まで- |
向山 裕次(STR Japan株式会社) |
第44回結晶成長国内会議 NCCG-44(東京) (2014) |
|
| Advanced chemical model for analysis of Cz and DS Si-crystal growth | A.N. Vorob’ev, et al | Journal of Crystal Growth 386 (2014) 226–234 | Silicon |
| Optimization of heating conditions during Cz BGO crystal growth | A.V. Kolesnikov, et al | Journal of Crystal Growth 407 (2014) 42-47 | BGO |
| Crystal twisting in Cz Si growth | V. Kalaev, et al | Journal of Crystal Growth 413 (2015) 12-16 | Silicon |
| 3D melt convection in sapphire crystal growth: Evaluation of physical properties | V.V. Timofeev, et al | International Journal of Heat and Mass Transfer 87 (2015) 42-48 | Sapphire |
| チョクラルスキー法によるシリコン単結晶成長への数値シミュレーションの適用-三次元横磁場解析や引き上げのダイナミクス解析による点欠陥制御- |
飯塚 将也（STR Japan 株式会社） |
応用物理学会 シリコンテクノロジー分科会 第179回 研究集会 (2015) |
Silicon |
| Na-Flux 法における窒化ガリウム単結晶成長のための数値解析 | 飯塚 将也（STR Japan 株式会社） | 第7回 窒化物半導体結晶成長講演会(プレISGN-6) (2015) | GaN |
| Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth | Parthiv Daggolu, et al | Journal of Crystal Growth, 452 (2016) 22-26 | Silicon |
| Impact of Anisotropic Thermal Stress on Behavior of Grown-In Defects during Si Crystal Growth from a Melt | E. Kamiyama, et al | ECS Journal of Solid State Science and Technology, 5(10) P553-P555 (2016) | Silicon |
| Melt flow before crystal seeding in Cz Si growth with transversal MF | M. Iizuka, et al | 18th International Conference on Crystal Growth and Epitaxy (2016) | Silicon |
| Modeling solutions for growth of silicon carbide | Y. Mukaiyama, et al | 18th International Conference on Crystal Growth and Epitaxy (2016) | Silicon carbide |
| Modeling of dislocation dynamics in germanium Czochralski growth | O.Podkopaev, et al | 18th International Conference on Crystal Growth and Epitaxy (2016) | Ge |
| Numerical study of microdefect formation during Cz growth of monocrystalline silicon | V.M. Mamedov, et al | 18th International Conference on Crystal Growth and Epitaxy (2016) | Silicon |
| Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF | M. Iizuka, et al | Journal of Crystal Growth, 468 (2017) 510-513 | Silicon |
| Numerical investigation of the effect of shape change in graphite crucible during top-seeded solution growth of SiC | Y. Mukaiyama, et al | Journal of Crystal Growth, 475 (2017) 178-185 | Silicon carbide |
| Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth | K. Sueoka, et al | ECS Transactions, 86 (10) 3-24 (2018) | Silicon |
| Numerical simulation considering effect of thermal stress and heavy doping for behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method | Y. Mukaiyama, et al | The 8th Forum on the Science and Technology of Silicon Materials 2018 (Okayama) | Silicon |
| Numerical modeling of effect of thermal stress and heavy doping for behavior of intrinsic point defecs in large-diameter Si crystal growing by Czochralski method | Y. Mukaiyama, et al | The 9th International Workshop on Modeling in Crystal Growth (2018) | Silicon |
| Effect of numerical parameters on prediction of the melt flow prediction and impurity transport within a simplified and real Cz Si crystal growth process geometry with effect of transverse magnetic fields | S. Demina, et al | The 9th International Workshop on Modeling in Crystal Growth (2018) | Silicon |
| Using of computer modeling to increase pulling rate and productivity in Cz Si crystal growth for solar applications | Zhixin Li, et al | The 9th International Workshop on Modeling in Crystal Growth (2018) | Silicon |
| Numerical modeling of β-Ga2O3 crystal growth by Czochralski method to investigate the spiral formation of crystal | M. Iizuka, et al | The 9th International Workshop on Modeling in Crystal Growth (2018) | Oxide |
