MOCVD 法による窒化物結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Novel approach to simulation of group-III nitrides growth by MOVPE. |
S.Yu. Karpov, et al |
MRS Internet J. Nitride Semicond. Res., 4, 4 (1999) |
| Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor. |
R. A. Talalaev, et al |
MRS Internet J. Nitride Semicond. Res., 4, 5 (1999) |
| On the possible origins of low indium incorporation during MOVPE of InGaN. |
R.A. Talalaev, et al |
Phys. Stat. Sol. (a), 176 (1999) 253-256 |
| Surface Segregation and Composition Fluctuations in ammonia MBE and MOVPE of InGaN. |
S.Yu. Karpov, et al |
Mat. Res. Soc. Symp. Proc., 639 (2001) G3.18. |
| Critical issues in group-III nitride MOVPE modeling. |
E.V. Yakovlev, et al |
Electrochemical Society Proceedings, Vol. 2003-08 (2003) 258 |
| MOVPE growth and in situ characterization of GaN layers on sapphire substrates. |
H. Hardtdegen, et al |
Phys. Stat. Sol. (a), 201 (2) (2004) 312-319 |
| New MOVPE process for horizontal reactors with reduced parasitic deposition. |
H. Hardtdegen, et al |
Journal of Crystal Growth, 272 (2004) 407-414 |
| Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study |
A.V. Kondratyev, et al |
Journal of Crystal Growth, 272 (2004) 420-425 |
| Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors. |
A. Lobanova, et al |
Journal of Crystal Growth, 266 (2004) 354-362 |
| Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating disk reactors. |
K. Mazaev, et al |
Journal of Crystal Growth, 261 (2004) 190-196 |
| Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor. |
E.V. Yakovlev, et al |
Journal of Crystal Growth, 261 (2004) 182-189. |
| IN-SITU INVESTIGATIONS OF GAN CHEMICAL UNSTABILITY DURING MOCVD |
R.A. Talalaev, et al |
Electrochemical Society Proceedings, 2005-09, 299-305 (2005) |
| Effect of V/III ratio in AlN and AlGaN MOVPE |
A.V. Lobanova, et al |
Journal of Crystal Growth, 287 (2006) 601-604 |
| Effects of reactor pressure and residence time on GaN MOVPE growth efficiency. |
W.V. Lundin, et al |
Journal of Crystal Growth, 287 (2006) 605-609 |
| Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor. |
E.V. Yakovlev, et al |
Phys. Stat. Sol. (c), 3 (6) (2006) 1620-1623 |
| Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors. |
M. Dauelsberg, et al |
Journal of Crystal Growth, 298 (2007) 418-424 |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor. |
C. Martin, et al |
Journal of Crystal Growth, 303 (2007) 318-322 |
| Influence of the Reactor Inlet Configuration on the AlGaN Growth Efficiency. |
E.V. Yakovlev, et al |
Journal of Crystal Growth, 298 (2007) 413-417. |
| Effect of metallic surface coverage on material quality in III-nitride MOVPE. |
A.V. Kondratyev, et al |
Phys. Stat. Sol. (c), 5 (6) (2008) 1691-1694 |
| Growth conditions and surface morphology of AlN MOVPE. |
A.V. Lobanova, et al |
Journal of Crystal Growth, 310 (2008) 4935-4938. |
| Hydrogen effects in III-nitride MOVPE. |
E.V. Yakovlev, et al |
Journal of Crystal Growth, 310 (2008) 4862-4866 |
| Mechanisms of AlInN growth by MOVPE: modeling and experimental study. |
E.V. Yakovlev, et al |
Phys. Stat. Sol. (c), 5 (6) (2008) 1688-1690 |
| Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs. |
A.V. Sakharov, et al |
Semiconductors, 43 6 (2009) 812-817 |
| Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity. |
M. V. Durnev, et al |
Applied Physics Letters 97 (2010) 051904 |
| Investigation of Nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach. |
M. Dauelsberg, et al |
Journal of Crystal Growth, 315 (2011) 224-228. |
| Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations. |
M. V. Durnev, et al |
Phys. Stat. Sol. (a), 208 (11) (2011) 2671-2675 |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice. |
W.V.Lundin, et al |
Journal of Crystal Growth, 315 (2011) 267-271. |
| High Aluminium Content and High Growth Rates of AlGaN in a Close-Coupled Showerhead MOVPE Reactor. |
J. Stellmach, et al |
Journal of Crystal Growth, 315 (2011) 229-232 |
| InGaN/GaN short-period superlattices: synthesis, properties, applications. |
A.F. Tsatsulnikov, et al |
Phys. Stat. Sol. (c), 8 (7-8) (2011) 2308-2310. |
| AlInN MOVPE: growth chemistry and analysis of trends. |
A.V. Lobanova, et al |
Journal of Crystal Growth, 352 (2012) 199-202 |
| High growth rate MOVPE of Al(Ga)N in planetary reactor |
W.V. Lundin, et al |
Journal of Crystal Growth 352 (2012) 209-213 |
| Correlations Between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures. |
E.V. Yakovlev, et al |
Jpn. J. Appl. Phys. 52 (2013) 08JB15. |
| MOVPE法(有機金属気相成長法)におけるAlNの表面モルフォロジーと成長条件 |
STR Group |
http://www.str-soft.com/products/cvdsim/ Nitride_Edtion/Case_1/ |
| MOVPE法によるIII族窒化物の成長における、表面金属被覆の結晶品質に対する影響 |
STR Group |
http://www.str-soft.com/products/cvdsim/ Nitride_Edtion/Case_2/ |
| AlGaNの成長効率に対するリアクター流入口形状の影響 |
STR Group |
http://www.str-soft.com/products/cvdsim/ Nitride_Edtion/Case_3/ |
| MOCVD法におけるⅢ族窒化物成膜プロセスのための数値解析 |
飯塚 将也(STR Japan株式会社) |
ナノ構造・エピタキシャル成長分科会 2014春季講演会 |
| Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops. | A.V. Lobanova, et al | Appl. Phys. Lett., 103 (2013) 152106. |
| On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors. | M. Dauelsberg, et al | Journal of Crystal Growth, 393 (2014) 103-107. |
| Transport Phenomena in Vapor Phase Epitaxy Reactors. | R. Talalaev, et al, In: Nishinaga T, Kuech TF, editors. | Handbook of Crystal Growth, Vol. III. Elsevier; 2015. pp.909–42. |
| On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors |
Dauelsberg, Martin, et al |
THE 19TH AMERICAN CONFERENCE ON CRYSTAL GROWTH AND EPITAXY in conjunction with THE 16TH US BIENNIAL WORKSHOP ON ORGANOMETALLIC VAPOR PHASE EPITAXY |
| Fast MOVPE of III-nitride materials at super-atmospheric pressure in horizontal flow reactor | W.V. Lundin, et al |
EWMOVPE 2013 15th European Workshop on Metalorganic Vapor Phase Epitaxy |
| AlN Growth Modelling in a Planetary Reactor on Large Substrates |
Daniel Brien, et al |
EWMOVPE 2013 15th European Workshop on Metalorganic Vapor Phase Epitaxy |
| New Mechanism of Stress Relaxation in (0001) InGaN-Based Heterostructures |
A. V. Lobanova, et al |
10th International Conference on Nitride Semiconductors |
| Fast MOVPE of III-N device heterostructures |
W.V. Lundin, et al |
17th International Conference on Metalorganic Vapor Phase Epitaxy |
| Optimization of MOVPE of nitride device structures for a wide range process conditions |
W.V. Lundin, et al |
5th International Symposium on Growth of III-Nitrides |
| Atomic-scale composition profiles of MOCVD-grown InGaN/GaN quantum wells: Modeling and characterization |
A. Segal, et al |
International Workshop on Nitride Semiconductors Wrozław |
| MOCVD 法での III 族窒化物エピタキシャル成長解析 |
塚田 佳紀 |
日本機械学会 第28回計算力学講演会(CMD2015) |
| On Mechanisms Governing AlN and AlGaN Growth Rate and Composition in Large Substrate Size Planetary MOVPE Reactors | Dauelsberg, Martin, et al | THE 19TH AMERICAN CONFERENCE ON CRYSTAL GROWTH AND EPITAXY in conjunction with THE 16TH US BIENNIAL WORKSHOP ON ORGANOMETALLIC VAPOR PHASE EPITAXY |
| Fast MOVPE of III-nitride materials at super-atmospheric pressure in horizontal flow reactor | W.V. Lundin, et al | EWMOVPE 2013 15th European Workshop on Metalorganic Vapor Phase Epitaxy |
| AlN Growth Modelling in a Planetary Reactor on Large Substrates | Daniel Brien, et al | EWMOVPE 2013 15th European Workshop on Metalorganic Vapor Phase Epitaxy |
| New Mechanism of Stress Relaxation in (0001) InGaN-Based Heterostructures |
A. V. Lobanova, et al | 10th International Conference on Nitride Semiconductors |
| Fast MOVPE of III-N device heterostructures | W.V. Lundin, et al | 17th International Conference on Metalorganic Vapor Phase Epitaxy |
| Optimization of MOVPE of nitride device structures for a wide range process conditions | W.V. Lundin, et al | 5th International Symposium on Growth of III-Nitrides |
| Atomic-scale composition profiles of MOCVD-grown InGaN/GaN quantum wells: Modeling and characterization | A. Segal, et al | International Workshop on Nitride Semiconductors Wrozław |
| MOCVD 法での III 族窒化物エピタキシャル成長解析 | 塚田 佳紀 | 日本機械学会 第28回計算力学講演会(CMD2015) |
HVPE 法による窒化物結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy |
S.Yu. Karpov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 743 (2003) Materials Research Society L3.40.1-6 |
| Indium-free violet LEDs grown by HVPE |
A.S. Usikov, et al |
phys. stat. solidi (c) 0, No. 7, 2265–2269 (2003) |
| Surface chemistry and transport effects in GaN hydride vapor phase epitaxy. |
A.S. Segal, et al |
Journal of Crystal Growth, 270 (2004) 384-395 |
| Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE. |
E. Richter, et al |
Journal of Crystal Growth, 277 (2005) 6-12 |
| Modeling Analysis of AlN and AlGaN HVPE |
A.S. Segal, et al |
Phys. Stat. Sol. (c), 6 (S2) (2009) S329-S332 |
| HVPE法(ハイドライド気相エピタキシャル成長法)によるAlGaN薄膜成長解析 |
STR Group |
http://www.str-soft.com/products/cvdsim/ HVPE/algan_hvpe/ |
| Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy |
S.Y. Karpov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 743 © 2003 Materials Research Society |
| Surface chemistry and transport effects in GaN hydride vapor phase epitaxy |
A.S. Segal, et al |
Journal of Crystal Growth 270 (2004) 384–395 |
| Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE |
E. Richter, et al |
Journal of Crystal Growth 277 (2005) 6–12 |
| Modeling analysis of AlN and AlGaN HVPE |
A.S. Segal, et al |
Phys. Status Solidi C 6, No. S2, S329–S332 (2009) |
| HVPE法(ハイドライド気相エピタキシャル成長法)によるGaN, AlN, AlGaN結晶成長解析 |
STR Group |
http://www.semitech.us/products/ Virtual_Reactor/hepigans/ |
昇華法による AlN 結晶成長解析
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere |
S.Y. Karpov, et al |
phys. stat. sol. (a) 176, 435 (1999) |
| On mechanisms of sublimation growth of AlN bulk crystals |
A.S. Segal, et al |
Journal of Crystal Growth 211 (2000) 68-72 |
| AlN crystal growth by sublimation technique |
S.Y. Karpov, et al |
Materials Science Forum Vols. 353-356 (2001) pp. 779-782 |
| Effect of reactive ambient on AlN sublimation growth |
S.Y. Karpov, et al |
Physica Status Solidi (a) 188, p.763–767 (2001) |
| Experimental and Theoretical Analysis of Heat and Mass Transport in the System for AlN Bulk Crystal Growth |
M.V. Bogdanov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 743 © 2003 Materials Research Society |
| Role of oxygen in AlN sublimation growth |
S.Y. Karpov, et al |
phys. stat. sol. (c), 1– 4 (2003) |
| Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals |
Eugenie Mokhov, et al |
ICSCRM 2003, Lyon, France, Part 2, P. 1545-1548 /Materials Science Forum 457-460 (2004) |
| Sublimation Growth of AlN bulk crystals in Ta crucibles |
E.N. Mokhov, et al |
Journal of Crystal Growth, V. 281, Issue 1, 2005, P. 93-100 |
| Experimental and theoretical analysis of sublimation growth of AlN bulk crystals |
Y.N. Makarov, et al |
"Journal of Crystal Growth, V. 310, Issue 5, 2008, P. 881-886" |
| Growth of AlN bulk crystals by sublimation sandwich method |
E.N.Mokhov, et al |
Original |
| Detailed Modeling Analysis of PVT Growth of AlN Bulk Crystals |
M.S. Ramm, et al |
Original |
| PVT法(昇華法)による窒化アルミニウム(AlN)結晶成長解析 |
STR Group |
http://www.str-soft.com/consulting/ pvt_growth/aluminum_nitride/ |
昇華法による SiC 結晶成長解析
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Transport phenomena in sublimation growth of SiC bulk crystals |
A.S. Segal, et al |
Materials Science and Engineering B61–62 (1999) 40–43 |
| Optimization of sublimation growth of SiC bulk crystals using |
M.S. Ramm, et al |
Materials Science and Engineering B61–62 (1999) 107–112 |
| Analysis of sublimation growth of bulk SiC crystals in tantalum container |
S.Y. Karpov, et al |
Journal of Crystal Growth 211 (2000) 347-351 |
| Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT |
M. Selder, et al |
Journal of Crystal Growth 211 (2000) 333-338 |
| Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide |
I.A.Ahmakin, et al |
Diamond and Related Materials 9 (2000) 446–451 |
| Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth |
M. V. Bogdanov, et al |
Journal of Crystal Growth 225, p.307-311(2001) |
| Virtual reactor: a new tool for SiC bulk crystal growth study and optimization |
M.V. Bogdanov, et al |
Materials Science Forum 353-356, p.57-60, (2001) |
| Inverse-computation design of a SiC bulk crystal trowth system |
A.V. Kulik, et al |
Mat. Res. Soc. Symp. Proc.640 (2001) H1.6 |
| Advances in Modeling of Wide-Bandgap Bulk Crystal Growth |
M.V. Bogdanov, et al |
ICSSC2002 |
| Modeling analysis of free-spreading sublimation growth of SiC crystals |
M. V. Bogdanov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 742 © 2003 Materials Research Society |
| Analysis of threading dislocations in wide-bandgap hexagonal semiconductors by energetic approach |
A.K. Semennikov, et al |
Materials Science Forum 457-460 p.383-386, (2004) |
| Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth |
A.V. Kulik, et al |
Mat. Sci. Forum 457-460 (2004) 67-70 |
| Modeling of facet formation in SiC bulk crystal growth |
I.D. Matukov, et al |
Journal of Crystal Growth 266 (2004) 313–319 |
| Industrial Challenges for Numerical Simulation of Crystal Growth |
M.V.Bogdanov, et al |
Centr. Eur. Jour. Phys.2(1), p.183-203, (2004) |
| Analysis of Graphitization during Physical vapor Transport Growth of Silicon Carbide |
P.J. Wellmann, et al |
Mat. Sci. Forum 457-460 (2004) 55-58 |
| Faceted Growth of SiC Bulk Crystals |
I.D. Matukov, et al |
Materials Science Forum Vols. 457-460 (2004) pp. 63-66 |
| In situ visualization of SiC physical vapor transport crystal growth |
Peter Wellmann, et al |
Journal of Crystal Growth 275 (2005) e1807–e1812 |
| Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace |
Eugene Tupitsyn, et al |
Materials Science Forum Vols. 600-603 (2009) pp 27-30 |
| Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation |
E.N.Mokhov, et al |
Materials Science Forum |
| Modeling of Mass Leakage through Porous Crucible in PVT Growth of Bulk SiC Crystals |
M.V. Bogdanov, et al |
Original paper |
| Effect of Seed Attachment on Stress Evolution in SiC Bulk Crystal Growth by PVT |
M.S.Ramm, et al |
Original paper |
| Dynamics of 4H-SiC Plasticity |
S.Y. Karpov, et al |
Original paper |
| PVT法(昇華法)によるシリコンカーバイト(SiC)結晶成長解析 |
STR Group |
http://www.str-soft.com/consulting/ pvt_growth/silicon_carbide/ |
| Numerical analysis of threading and basal plane dislocations in bulk SiC crystals grown by PVT |
Mark RAMM, et al |
10th European Conference on Silicon Carbide and Related Materials - ECSCRM 2014 - |
CVD 法による SiC 結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Modeling analysis of SiC CVD in a planetary reactor. |
A.N. Vorob’ev, et al |
Mat. Science Forum, 353-356 (2001) 103-106. |
| Numerical study of SiC CVD in a vertical cold-wall reactor. |
A.N. Vorob’ev, et al |
Computational Materials Science, 24 (2002) 520–534. |
| Modeling analysis of SiC CVD in the horizontal hot wall reactors. |
A.K. Semennikov, et al |
Electrochemical Society Proceedings, Vol. 2003-08 (2003) 210. |
| Analysis of SiC CVD Growth in a Horizontal Hot-wall Reactor by Experiment and 3D Modelling. |
Y. Shishkin, et al |
Mat. Science Forum, 556-557 (2007) 61-64 |
| Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane. |
Yuri N. Makarov, et al |
Mat. Science Forum, 600-603 (2009) 51-53 |
| Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals. |
R.A. Talalaev, et al |
Published in: Crystal Growth Technology: Semiconductors and Dielectrics. Edited by P. Capper and P. Rudolph (2010). |
| 熱CVD法における窒素ドープSiC成膜のための数値解析 |
飯塚 将也(STR Japan株式会社) |
先進パワー半導体分科会 第1回講演会 (名古屋) |
| Modeling of silicon carbide chemical vapor deposition in a vertical reactor |
A.N. Vorob’ev, et al |
Materials Science and Engineering B61–62 (1999) 172–175 |
| Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition |
A.N. Vorob’ev, et al |
"Materials Science and Engineering B61–62 (1999) 176–178" |
| Modeling of gas phase nucleation during silicon carbide chemical vapor deposition |
A.N. Vorob’ev, et al |
Diamond and Related Materials 9 (2000) 472–475 |
| Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide |
A.N. Vorob’ev, et al |
Journal of Crystal Growth 211 (2000) 343-346 |
| COMPUTATIONAL EXPERIMENT ON CVD OF SiC: GROWTH RATE, C/Si RATIO, PARASITIC PHASE FORMATION |
A.N. Vorob’ev, et al |
Materials Research Society Symposium Proceedings 616, 165 (2000) |
| Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating Disc Reactor |
A.N. Vorob’ev, et al |
Materials Science Forum Vols. 353-356 (2001) pp 107-110 |
| Modeling Analysis of SiC CVD in Planetary Reactor |
A.N. Vorob’ev, et al |
Materials Science Forum Vols. 353-356 (2001) pp 103-106 |
| Numerical study of SiC CVD in a vertical cold-wall reactor |
A.N. Vorob’ev, et al |
Computational Materials Science 24 (2002) 520–534 |
| Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane |
Y.N.Makarov, et al |
Materials Science Forum Vols. 600-603 (2009) p. 51-53 |
| EFFECT OF GAS PHASE NUCLEATION ON SILICON CARBIDE CHEMICAL VAPOR DEPOSITION |
A.N.Vorob’ev, et al |
Original paper |
| MODELING ANALYSIS OF SIC CVD IN THE HORIZONTAL HOT WALL1 REACTORS |
A.K. Semennikov, et al |
Original paper |
| Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC |
A.S. Segal, et al | Materials Science Forum Vols 821-823 (2015) pp 145-148 |
MOCVD 法による III-V 結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Quasi-thermodynamic models of surface chemistry: application to MOVPE of III-V ternary compounds. |
S.Yu. Karpov, et al |
Electrochemical Society Proceedings, Vol. 2000-13, edited by M.D. Allendorf and M.L. Hitchman, (2000) 723-730 |
| Comprehensive reactor-scale modeling of III-V ternary compound growth by MOVPE. |
E.V. Yakovlev, et al |
Mat. Res. Soc. Symp. Proc., 616 (2000) 153-158. |
| On low temperature kinetic effects in Metal - Organic Vapor Phase Epitaxy of III-V compounds. |
R.A. Talalaev, et al |
Journal of Crystal Growth 230 (2001) 22-29 |
| Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary compounds in Production-Scale AIX 2400G3 Planetary Reactor |
E.V. Yakovlev, et al |
Electrochemical Society Proceedings, Vol. 2001-13, (2001) 292-300 |
| Development of a computational model for process parametric studies in a MOVPE multiwafer reactor, using the STR CVD-Module software |
R.A. Talalaev, et al |
EVMOVPEX, 8-11 (2003) |
| MOVPE法によるIII-V族薄膜成長解析 |
STR Group |
http://www.str-soft.com/consulting/ cvd_of_iii_vs/mocvd/ |
CVD 法による Si, SiGe 結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| GLOBAL MODEL OF SILICON CHEMICAL VAPOR DEPOSITION IN CENTURA REACTORS |
A.S. Segal, et al |
Electrochem. Soc. Proc. 2000-13 (2000) 456 |
| Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors |
A.S. Segal, et al |
Microelectronic Engineering 56 (2001) 93–98 |
| Kinetics of SiGe chemical vapor deposition from chloride precursors |
A.A. Lovtsus, et al |
Journal of Crystal Growth 287 (2006) 446–449 |
| Convection-assisted Chemical Vapor Deposition (CoCVD) of silicon on Large-Area substrates |
T. Kunz, et al |
Journal of Crystal Growth 310 (2008) p. 1112-1117 |
| Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures, | P. Storck, et al | Thin Solid Films 518 (2010) S23–S29 |
シーメンス法による多結晶シリコン結晶成長
| 題名 | 発表者 | 発表先 |
|---|---|---|
| シーメンス法による多結晶シリコン結晶成長解析 |
STR Group |
http://www.semitech.us/products/ PolySim/ |
全般
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Critical issues of MOCVD process design: from reactor efficiency to material properties |
Roman Talalaev |
2015 Lawrence Workshop on Epitaxy |
