デバイス解析
光学デバイス ( LED, Laser )
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Dislocation Effect on Light Emission Efficiency in Gallium Nitride |
S. Yu. Karpov, et al |
Appl. Phys. Lett. 81 (2002) 4721-4723 |
| Segregation effects and bandgap engineering in InGaN quantum-well heterostructures |
K. A. Bulashevich, et al |
Mat. Res. Soc. Symp. Proc. 743, (2003) L.6.5.1-6 |
| Indium-free violet LEDs grown by HVPE |
A. S. Usikov, et al |
Phys. Stat. Solidi (c) 0 (2003) 2265-2269 |
| HVPE-grown AlN-GaN based structures for UV spectral region |
A. S. Usikov, et al |
In: UV Solid-State Light Emitters and Detectors, Eds. M.S. Shur and A. Zukauskas, Kluver Academic Publishers, Netherlands (2004) 15-29 |
| Carrier injection and light emission in visible and UV nitride LEDs by modeling |
S. Yu. Karpov, et al |
Phys. Stat. Solidi (b) 241 (2004) 2668-2671 |
| Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight |
V. F. Mymrin, et al |
J. Cryst. Growth 281 (2005) 115-124 |
| Heterojunctions between group-III nitride short-period superlattices |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 2 (2005) 2394-2398 |
| Modelling of MQW LED operation |
V. F. Mymrin, et al |
Phys. Stat. Solidi (c) 2 (2005) 2928-2931 |
| Simulation of Hybrid ZnO/AlGaN Single-Heterostructure Light-Emitting Diode |
K. A. Bulashevich, et al |
Appl. Phys. Lett. 87 (2005) 243502 |
| Simulation of Visible and Ultra-Violet Group-III Nitride Light Emitting Diodes |
K. A. Bulashevich, et al |
J. Comput. Phys. 213 (2006) 214-238 |
| Current crowding effects on blue LED operation |
I. Yu. Evstratov, et al |
Phys. Stat. Solidi (c) 3 (2006) 1645-1648 |
| Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (b) 243 (2006) 1625-1629 |
| ZnO-Based Light Emitters |
A. Osinsky, et al |
In: Zinc Oxide. Bulk, Thin Films and Nanostructures, Eds. C. Jagadish and S.J.Pearton, Elsevier, Ch.15 (2006) 525-554 |
| Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (a) 204 (2007) 241-245 |
| Current spreading and thermal effects in blue LED dice |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 4 (2007) 45-48 |
| Effect of Free-Carrier Absorption on Performance of 808 nm AlGaAs-Based High-Power Laser Diodes |
K. A. Bulashevich, et al |
Semicond. Sci. Technol. 22 (2007) 502-510 |
| Visible Light-Emitting Diodes |
S. Yu. Karpov, et al |
In: Nitride Semiconductor Devices: Principles and Simulation, Ed. J. Piprek, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Ch.14 (2007) 303-325 |
| Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 5 (2008) 2066-2069 |
| Current spreading, heat transfer, and light extraction in multi-pixel LED array |
M. V. Bogdanov, et al |
hys. Stat. Solidi (c) 5 (2008) 2070-2072 |
| Coupled modeling of current spreading, thermal effects, and light extraction in III-Nitride light-emitting diodes |
M. V. Bogdanov, et al |
Semicond. Sci. Technol. 23 (2008) 125023 |
| Hybrid CdZnO/GaN quantum-well light emitting diodes |
J. W. Mares, et al |
J. Appl. Phys. 104 (2008) 093107 |
| Bandgap Engineering of III-Nitride Devices от Low-Defect Substrates |
S. Yu. Karpov |
In: III-Nitride Devices and Nanoengineering, Ed. Zhe Chuan Feng, Imperial College Press, London, Ch.13 (2008) 367-398 |
| Effects of electron and optical confinement on performance of UV laser diodes |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 6 (2009) 603-606 |
| Assessment of various LED structure designs for high-current operation |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 6 (2009) S804-S806 |
| Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth |
A. Y. Polyakov, et al |
J. Appl. Phys. 105 (2009) 123708 |
| Mechanism of carrier injection in (Ni/Au)/p-AlxGa1−xN:Mg (0 ≤ x ≤ 0.1) Ohmic contacts |
S. Nikishin, et al |
Appl. Phys. Lett. 95 (2009) 163502 |
| Comparison of Alternative Approaches to High-Power Thin-Film LED Chip Design |
K. A. Bulashevich, et al |
Proceedings of the Second International Conference on White LEDs and Solid State Lighting, Taipei (2009) TB1-5 |
| Spontaneous polarization in III-nitride materials: crystallo-graphic revision |
S. Yu. Karpov |
Phys. Stat. Solidi (c) 7 (2010) 1841-1843 |
| Effect of ITO spreading layer on performance of blue light-emitting diodes |
M. V. Bogdanov |
Phys. Stat. Solidi (c) 7 (2010) 2127-2129 |
| Current crowding effect on light extraction efficiency of thin-film LEDs |
M. V. Bogdanov, et al |
Phys. Stat. Solidi (c) 7 (2010) 2124-2126 |
| Short period p-type AlN/AlGaN superlattices for deep UV light emitters |
S. Nikishin, et al |
MRS Symp. Proc. 1202 (2010) 1202-I10-03 |
| Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties |
A. Polyakov, et al |
Phys. Status Solidi (a), 207 (2010) 1383-1385 |
| Effect of Temperature and Current Variation on the Colour Quality of White Light Emitting Diodes |
O. V. Khokhlev |
In: Proc. 12th Int. Symposium on the Science and Technology of Light Sources & 3rd Int. Conf. on White LEDs and Solid State Lighting, Eds. M. Haverlag, G. M. W. Kroesen and T. Taguchi, FAST-LS Ltd. (2010) 29-30 |
| Indium Incorporation and Optical Transitions in InGaN Bulk Materials and Quantum Wells with Arbitrary Polarity |
M. V. Durnev, et al |
Appl. Phys. Lett. 97 (2010) 051904 |
| Effect of localized states on internal quantum efficiency of III-nitride LEDs |
S. Yu. Karpov, et al |
Phys. Status Soildi RRL, 4 (2010) 320-322 |
| Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency |
A. Y. Polyakov, et al |
Appl. Phys. Lett. 98 (2011) 072104 |
| Modeling of III-Nitride Light-Emitting Diodes: Progress, Problems, and Perspectives |
S. Yu. Karpov, et al |
Proc. of SPIE 7939 (2011) 79391C |
| Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations |
M. V. Durnev, et al |
Phys. Stat. Solidi (a) 208 (2011) 2671-2675 |
| Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling |
D. A. Zakheim, et al |
Phys. Stat. Solidi (a) 209 (2012) 456-460 |
| Simulation of light-emitting diodes for new physics understanding and device design |
K. A. Bulashevich, et al |
In: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI, Eds. K. P. Streubel, H. Jeon, L.-W. Tu, and N. Linder, Proc. of SPIE 8278 (2012) 827819 |
| Metastable centers in AlGaN/AlN/GaN heterostructures |
A. Y. Polyakov, et al |
J. Vac. Sci. Technol. B 30 (2012) 041209 |
| Polarization phenomena in light emission from C-plane Al(In)GaN heterostructures |
M. V. Durnev, et al |
Phys. Stat. Solidi (b) 250 (2013) 180-186 |
| Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs |
A. E. Chernyakov, et al |
Phys. Stat. Solidi (a) 210 (2013) 466-469 |
| Polarization doping for III-nitride optoelectronics |
O. V. Khokhlev, et al |
accepted to Phys. Stat. Solidi (a) (2013) |
| Correlations Between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures |
E. V. Yakovlev, et al |
Jpn. J. Appl. Phys. 52 (2013) 08JB15 |
| 青色LED 単一量子井戸(SQW)ヘテロ構造のバンド計算 |
STR Group |
http://www.semitech.us/products/ SiLENSe/example_1/ |
| 青色LED 多重量子井戸(MQW)ヘテロ構造のバンド計算 |
STR Group |
http://www.semitech.us/products/ SiLENSe/example_2/ |
| サファイア基板上のUV レーザダイオード特性解析 |
STR Group |
http://www.semitech.us/products/ SiLENSe/example_3/ |
| II族-O/III族-N ハイブリッドLEDヘテロ構造のバンド計算 |
STR Group |
http://www.semitech.us/products/ SiLENSe/example_5/ |
| 極性/半極性/無極性ヘテロ構造の特性解析 |
STR Group |
http://www.semitech.us/products/ SiLENSe/example_6/ |
| LEDチップの熱的、電気的解析 |
STR Group |
http://www.str-soft.com/products/ SpeCLED/ |
| LEDチップの光学的解析(光取り出し) |
STR Group |
http://www.str-soft.com/products/ RATRO/ |
| Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes | S. Yu. Karpov, et al | Phys. Status Solidi RRL (2015) / DOI 10.1002/pssr.201510073 |
| Theoretical and Experimental Study of Thermal Management in High-Power AlInGaN LEDs | A. E. Chernyakov, et al | Proc. 15th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (2014) 1-5 / DOI: 10.1109/EuroSimE.2014.6813819 |
| Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes | I. E. Titkov, et al | IEEE J. Quantum Electron. 50 (2014) 911-920. |
| ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs a review | S. Yu. Karpov, et al | Opt. Quantum Electron. (2014) / DOI: 10.1007/s11082-014-0042-9 |
| Strategies for creating efficient, beautiful whites | S. Yu. Karpov, et al | Compound Semiconductors, 21 (2015) 44-47. |
| Optimal ways of colour mixing for high-quality white-light LED sources | K. A. Bulashevich, et al | Phys. Stat. Solidi (a), 212 (2015) 914-919. |
| Optimal Ways of Color Mixing for High-Quality White-Light LED Sources |
K. A. Bulashevich, et al |
International Workshop on Nitride Semiconductors Wrozław |
電子デバイス
| 題名 | 発表者 | 発表先 |
|---|---|---|
| Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE |
S. B. Aleksandrov, et al |
Phys. Stat. Solidi (c) 2 (2005) 2688-2691 |
| A surface trap model and its application to analysis of III-nitride HEMT performance |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 3 (2006) 2356-2359 |
| Assessment of the pendeo-epitaxy effect on 2DEG mobility in III-nitride HEMT heterostructures |
K. A. Bulashevich, et al |
Phys. Stat. Solidi (c) 5 (2008) 1980-1982 |
太陽電池
| 題名 | 発表者 | 発表先 |
|---|---|---|
| III-V族、III族窒化物半導体の太陽電池解析 |
STR Group |
https://www.str-soft.co.jp/dataimge/ 1363849085.pdf |
| Assessment of factors limiting conver¬sion efficiency of single-junction III-nitride solar cells | K. A. Bulashevich, et al | Phys. Stat. Solidi (c) 11, (2014) 640-643. |
